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| GaAs PA Module UN0231C RF Power Amplifier Module Unit : mm For the preamplifier of the transmitting section in a cellular phone s Features * High efficiency with super miniature, 0.08 cc package(7.5 x 7.5 x 1.7 mm) 0.8 12 11 10 1 2 3 6 7.3 7.50.15 5 4 4.0 s Absolute Maximum Ratings Ta=25C Parameter Power supply voltage 1 *1 Power supply voltage 2 *1 Circuit current 1 Circuit current 2 Gate voltage Max input power Allowable power dissipation Case temperature *2 Storage temperature Symbol VDD1 VDD2 IDD1 IDD2 VGG PIN PD Tcase Tstg Ratings 6 6 200 800 -4 10 2 -30 to +110 -30 to +120 Unit V V mA mA V dBm W C C 1 : PIN 2 : VDD1 3 : VDD2 4 : POUT 4-0.7 7 8 (0.9) 2-1.2 4.0 7.50.15 9 1.50.2 0.59 Tolerance dimension without indication : 0.3 5 : GND 6 : VGG 7 : GND 8 : GND PAM01 9 : GND 10 : GND 11 : GND 12 : GND Note) 1. The reverse of the device is solderd to the plate 2. *1 : VGG=-3.5 V *2 : Tcase=25C s Electrical Characteristics VGG=-2.5 V, f=824 MHz to 849 MHz, Ta=25C3C, Nominal : ZS=ZL=50 Parameter Idle current Gate current *1 Symbol Iidle IGG IDD1 IDD2 G1 G2 2fO 3fO 4fO *1 Conditions VDD1=VDD2=3.5 V, PIN=No VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=27.0 dBm VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=27.0 dBm VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=30.5 dBm VDD1=VDD2=3.5 V, POUT=27.0 dBm VDD1=VDD2=3.5 V, POUT=27.0 dBm 900 kHz Detuning, 30 kHz Bandwidth VDD1=VDD2=3.5 V, POUT=27.0 dBm 1980 kHz Detuning, 30 kHz Bandwidth min typ 110 max 140 4 Unit mA mA mA mA dB dB Circuit current 1 *1 Circuit current 2 Gain 1 *1 Gain 2 *2 *2 600 390 24.0 25.5 26.5 27.5 670 440 2nd harmonics *1 3rd harmonics *1 4th harmonics *1 Voltage standing wave ratio Adjacent channel leakage power suppression 1 *2 Adjacent channel leakage power suppression 2 *2 Note) *1 : No modulation. *2 : Offset from QPSK signal. -30 -30 -30 3 -45 -57 dBc dBc dBc dBc dBc VSWR IN ACPR1 ACPR2 1 |
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